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Studies of Resistive-type Hydrogen-Sensitive Sensors Using Pd-Based Thin Films

Authors:
Hao Lo
Chieh Lo
Jian-Hong Wu
Wen-Shiung Lour

Keywords: hydrogen; resistive-type; sensitivity; sensorr

Abstract:
Zigzag-shaped Pd-based thin films (pure Pd and Pd-SiO2 mixture with thickness ranged from 10 nm to 100 nm deposited on cover-glass substrates were used to fabricate resistive-type hydrogen sensors. It is found that relative sensitivities are independent of the thin-film thickness and are 10%, 7.4%, 6.1%, and 5% for the pure-Pd sensor in 2%, 1.5%, 1%, and 0.5% H2/N2, respectively. However, its response time (ta) is substantially influenced by the thin-film thickness for pure-Pd resistive-type sensor. ta is measured with a thickness coefficient of 0.14 s/nm in 2% H2/N2 while it is 0.5 s/nm in 1% H2/N2. Compared to the pure-Pd sensor, the Pd-SiO2 sensor has a shorter response time (20 s to 33 s) and a higher relative sensitivity (8.7% to 6.1%) in 1% H2/N2. In 3% H2/N2, relative sensitivity is even as high as 15.2% with a response time of 10 s.

Pages: 41 to 43

Copyright: Copyright (c) IARIA, 2017

Publication date: March 19, 2017

Published in: conference

ISSN: 2519-836X

ISBN: 978-1-61208-543-2

Location: Nice, France

Dates: from March 19, 2017 to March 23, 2017