Home // ALLSENSORS 2018, The Third International Conference on Advances in Sensors, Actuators, Metering and Sensing // View article
Authors:
Hao Lo
Chieh Lo
Tzung-Min Tsai
Wen-Shiung Lour
Keywords: hydrogen; transistor; Schottky; sensor
Abstract:
In this paper, we address the temperature dependences of sensing properties of a GaAs-based bipolar transistor with a metal-semiconductor-metal hydrogen-sensitive sensor. Experimental results reveal that (1) response times obtained from the sensing base and collector currents in 0.01% H2/N2 are 350 s and 400 s at 50oC; (2) Only a power consumption of 0.25 to 1.25 µW is required in a standby mode; and (3) the sensing collector current gain in 1% H2/N2 is increased from 900 at 25oC to 1910 at 50oC, then to 2010 at 80oC and finally to 2890 at 110oC.
Pages: 10 to 12
Copyright: Copyright (c) IARIA, 2018
Publication date: March 25, 2018
Published in: conference
ISSN: 2519-836X
ISBN: 978-1-61208-621-7
Location: Rome, Italy
Dates: from March 25, 2018 to March 29, 2018