Home // CENICS 2011, The Fourth International Conference on Advances in Circuits, Electronics and Micro-electronics // View article
Authors:
Olivier Tesson
Stéphane Charlot
Magali Duplessis
Keywords: Finite Element Method, Through Silicon Via, passive integration, filtering, EM simulations
Abstract:
In this paper, the design of an original fully integrated band-pass filter at 4 GHz using low-aspect ratio Through Silicon Vias (TSVs) is presented. Response of the filter has been simulated within a single BGA (Ball-Grid Array) package implemented on a Rogers substrate. Simulations have been performed with the help of a FEM (Finite Element Method) 3D EM (Electro-Magnetic) simulator. Prior to filter implementation, a comparison between simulated and measured data is proposed on both 3D solenoids and the package in order to calibrate the simulator and validate the simulation methodology. The obtained simulation results are successfully correlated to measurement results. Then the filter is built taking into account the previously defined building blocks (solenoids + packaging) and optimized by taking into account its global environment. The proposed solution allows a clear reduction of the filter footprint compared to discrete devices based implementation. The total area of the filter is 3.6 mm x 2.4 mm. The insertion loss and return loss at 4 GHz are about 2.6 dB and 16 dB respectively.
Pages: 23 to 28
Copyright: Copyright (c) IARIA, 2011
Publication date: August 21, 2011
Published in: conference
ISSN: 2308-426X
ISBN: 978-1-61208-150-2
Location: Nice/Saint Laurent du Var, France
Dates: from August 21, 2011 to August 27, 2011