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Authors:
Mansour Fall
Frederic Domingue
Siamak Fouladi
Raafat R. Mansour
Keywords: reconfigurable power amplifier; tunable impedance matching; RF microelectromechanical system (MEMS); CMOS-MEMS; variable capacitors
Abstract:
A reconfigurable quad-band CMOS power amplifier suitable for multi-band radiofrequency transceivers is presented. The multi-band power amplifier is a reconfigurable monolithic microwave integrated circuit designed to operate in 1.7, 1.8, 1.9 and 2.1 GHz frequency bands. The structure is a single ended one stage class AB power amplifier with tunable impedance matching network based on high Q micromachined inductors and MEMS tunable capacitors. The reconfigurable power amplifier is fully integrated in 0.18µm CMOS technology and achieves maximum output power with good efficiency over different operating frequencies. The device has a simulated maximum output power of 20 dBm and can achieve a variable gain over than 16 dB in the four operating bands with a power-added efficiency (PAE) better than 50%.
Pages: 34 to 37
Copyright: Copyright (c) IARIA, 2011
Publication date: August 21, 2011
Published in: conference
ISSN: 2308-426X
ISBN: 978-1-61208-150-2
Location: Nice/Saint Laurent du Var, France
Dates: from August 21, 2011 to August 27, 2011