Home // CENICS 2011, The Fourth International Conference on Advances in Circuits, Electronics and Micro-electronics // View article
Authors:
Samia Slimani
Bouaza Djellouli
Keywords: DG-MOSFET; quantum effects; nextnano3d; modeling.
Abstract:
Performance of high-k Double-Gate SOI MOSFETs is studied and compared to silicon dioxide based devices. This is achieved by computing variation of threshold voltage, swing subthreshold, leakage current and drain-induced barrier lowering (DIBL) with respect to different gate bias (VG) when gate length (LG) decreases. This comparison is pinpointed taking SiO2 and HfO2 as gate oxides. Furthermore, quantum effects on the performance of DG MOSFETs are discussed. It is observed that less EOT with high permittivity reduces the tunnel current and serves to maintain high drive current, when compared with device using SiO2 dielectric. Our results show that the characteristics of SOI Double Gate MOSFET with HfO2 are superior to that of a device with SiO2 dielectric
Pages: 38 to 41
Copyright: Copyright (c) IARIA, 2011
Publication date: August 21, 2011
Published in: conference
ISSN: 2308-426X
ISBN: 978-1-61208-150-2
Location: Nice/Saint Laurent du Var, France
Dates: from August 21, 2011 to August 27, 2011