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High Speed and Ultra Low-Voltage CMOS Carry Propagation Chain using Floating-Gate Transistors

Authors:
Yngvar Berg

Keywords: CMOS; Low-Voltage; Carry; High-Speed; Floating-Gate; Pass Transistors.

Abstract:
Ultra low-voltage (ULV) CMOS logic for high-performance applications is presented. By applying floating capacitors we can increase the current level of MOS transistors for supply voltages below $500mV$. The current level of the transistors may be increased by a factor 40 for supply voltages below 0.3V. Simple NAND gates are presented using different topologies. The NAND gates are exploited to provide a high-speed and ultra low-voltage serial carry chain. Compared to conventional serial CMOS carry gates the delay is reduced by a factor 10 or more. Simulated data are based on {em SpectreS} simulator provided by {em Cadence} and are valid for 90nm TSMC CMOS process.

Pages: 1 to 6

Copyright: Copyright (c) IARIA, 2013

Publication date: August 25, 2013

Published in: conference

ISSN: 2308-426X

ISBN: 978-1-61208-302-5

Location: Barcelona, Spain

Dates: from August 25, 2013 to August 31, 2013