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60 GHz Low-Noise Amplifier in a 70 nm GaAs m-HEMT Technology for Multi-band Impulse Detection System

Authors:
Pape Sanoussy Diao
Thierry Alves
Benoît Poussot
Martine Villegas

Keywords: LNA; 60 GHz; GaAs m-HEMT; Millimeter wave technology; Multi-band detection system

Abstract:
In this paper, we present a 60 GHz Low-Noise Amplifier (LNA) to improve the performance of multi-band detection systems. The LNA is designed in 70 nm GaAs metamorphic High Electron Mobility Transistor (m-HEMT) technology and occupies an area of 1.47 x 1.0 mm2. The inductive degeneration technique is used for a suitable trade-off between gain and noise. The threestage LNA achieves a gain of 14.3 dB and a noise factor of 2.1 dB at 60.2 GHz, while consuming 13.5 mW. The simulated non-linear characteristics show an IP1dB (Input 1 dB compression Point) of -9.6 dBm and an IIP 3 (Input third-order Intercept Point) of -4.8 dBm.

Pages: 19 to 24

Copyright: Copyright (c) IARIA, 2019

Publication date: October 27, 2019

Published in: conference

ISSN: 2308-426X

ISBN: 978-1-61208-748-1

Location: Nice, France

Dates: from October 27, 2019 to October 31, 2019