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Optimization of Achievable Information Rates and Number of Levels in Multilevel Flash Memories

Authors:
Xiujie Huang
Aleksandar Kavcic
Xiao Ma
Guiqiang Dong
Tong Zhang

Keywords: Channel capacity; input-dependent additive Gaussian noise (ID-AGN) channel; multilevel flash memory

Abstract:
This paper is concerned with channel modeling and capacity evaluation of the multilevel flash memory with m levels. The m-level flash memory channel (m-LFMC) is modeled as an m-amplitude-modulation channel with input-dependent additive Gaussian noise whose standard deviation depends on the channel input. Then the capacity of an m-LFMC is given. The determination of the capacity can be transformed into a two-step optimization problem, which can be numerically solved by an alternating iterative algorithm. This algorithm delivers not only the optimal input/level distribution but also the optimal values of levels. This algorithm also delivers the optimized number of levels at any given voltage-to-deviation ratio. Numerical results are presented to show the consistency with well-known Smith’s results for the amplitude-limited AWGN channel and the applicability of the modeling method.

Pages: 125 to 131

Copyright: Copyright (c) IARIA, 2013

Publication date: January 27, 2013

Published in: conference

ISSN: 2308-4413

ISBN: 978-1-61208-245-5

Location: Seville, Spain

Dates: from January 27, 2013 to February 1, 2013