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A Contribution to the Evaluation of NAND Flash Memory

Authors:
Jaroslav Kadlec
Radek Kuchta
Radovan Novotný
Zdenka Kuchtová

Keywords: flash memory; non-volatile; bit error rate; error correction code; architecture; reliability

Abstract:
NAND flash memories are well known for their uncomplicated structure, low cost, and high capacity. Their typical characteristics include architecture, sequential reading, and high density. NAND flash memory is a non-volatile type of memory and has low power consumption. The erasing of NAND Flash memory is based on a block-wise base. Since cells in a ?ash chip will fail after a limited number of writes, limited write endurance is a key characteristic of flash memory. There are many noise causes, such as read or program disturbances, retention process, charge leakage, trapping generation, etc. Preferably, all errors in the storage would be adjusted by the ECC algorithm. The conclusion of all mentioned parasitic factors creates a set of external and internal influences which affects variable behavior of memory in time. To prepare an overall analysis of all the important factors that affect the reliability and life-cycle endurance of NAND flash memories and describe the methodology for their evaluation was our main motivation for this paper.

Pages: 74 to 78

Copyright: Copyright (c) IARIA, 2015

Publication date: April 19, 2015

Published in: conference

ISSN: 2308-4243

ISBN: 978-1-61208-399-5

Location: Barcelona, Spain

Dates: from April 19, 2015 to April 24, 2015