Home // ICQNM 2011, The Fifth International Conference on Quantum, Nano and Micro Technologies // View article

Improved Linearity CMOS Active Resistor Structure Using Computational Circuits

Authors:
Cosmin Popa

Keywords: Linearity; active resistor circuit; computational circuits; VLSI design.

Abstract:
A new low-power low-voltage active resistor structure with improved performances will be presented. The problem of circuit linearity is solved by implementing an original technique, using a proper current biasing of the differential core, while the existing solutions allow only a partial improvement of the circuit performances. The structures are implemented in 0.35um CMOS technology and are supplied at +-3V. The circuits present a very good linearity (in the worst case, total order distortions <0.4%), correlated with an extended range of the input voltage (at least +-0.5V). The tuning range of the active resistors is about hundreds k omega - M omega.

Pages: 67 to 70

Copyright: Copyright (c) IARIA, 2011

Publication date: August 21, 2011

Published in: conference

ISSN: 2308-3530

ISBN: 978-1-61208-151-9

Location: Nice/Saint Laurent du Var, France

Dates: from August 21, 2011 to August 27, 2011