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Assessment of High-Frequency Peformance Potential of Graphene Field-Effect Transistors

Authors:
Jyotsna Chauhan
Leitao Liu
Yang Lu
Jing Guo

Keywords: graphene transistors, RF performance, quantum transport simualtion

Abstract:
We assess high frequency performance potential of graphene field-effect transistors (FETs) down to a channel length of 10nm by using self-consistent ballistic and dissipative quantum transport simulations. The results indicate that with a thin high-κ gate insulator, the intrinsic ballistic cut off frequency fT is above 5THz at a gate length of 10nm. Inelastic phonon scattering in graphene FETs lowers both fT and the unitary power gain frequency fMAX, mostly due to decrease of the transconductance. fMAX and fT are severely degrading in presence of source and drain contact resistance. To achieve optimum extrinsic fMAX performance, careful choice of DC bias point in quasi-saturation regime and gate width is needed. Modeling of dissipative quantum transport is based on implementation of parallel simulation algorithms for the self-consistent Born approximation in the non-equilibrium Green’s function (NEGF) formalism.

Pages: 42 to 45

Copyright: Copyright (c) IARIA, 2012

Publication date: August 19, 2012

Published in: conference

ISSN: 2308-3530

ISBN: 978-1-61208-214-1

Location: Rome, Italy

Dates: from August 19, 2012 to August 24, 2012