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Electrical and Structural Analysis of CNT-Metal Contacts in Via Interconnects

Authors:
Patrick Wilhite
Phillip Wang
Anshul Vyas
Jason Tan
Jeongwon Park
Hua Ai
Murali Narasimhan
Cary Y. Yang

Keywords: carbon nanotube; via; resistance; contact resistance.

Abstract:
Vertically aligned carbon nanotubes grown by plasma-enhanced chemical vapor deposition offer a potentially suitable material for via interconnects in next-generation integrated circuits. Key performance-limiting factors include high contact resistance and low carbon nanotube packing density, which fall short of meeting the requirements delineated in the ITRS roadmap for interconnects. For individual carbon nanotube s, contact resistance is a major performance hurdle since it is the dominant component of carbon nanotube interconnect resistance, even in the case of vertically aligned carbon nanotube arrays. In this study, we correlate the carbon nanotube-metal interface nanostructure to their electrical properties in order to elucidate growth parameters that can lead to high density and low contact resistance and resistivity.

Pages: 41 to 43

Copyright: Copyright (c) IARIA, 2013

Publication date: August 25, 2013

Published in: conference

ISSN: 2308-3530

ISBN: 978-1-61208-303-2

Location: Barcelona, Spain

Dates: from August 25, 2013 to August 31, 2013