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Competitive Mechanisms of Resistive Switching in Nanooxide Based Memory Cells

Authors:
Dmitriy Stremous
Aleksandr Danilyuk
Denis Podryabinkin
Victor Borisenko

Keywords: resistive switching; nanooxide; memory cell

Abstract:
Atomic migration and electronic switching of bi stable centers in conducting filaments formed in nanooxide based resistive random access memory (RRAM) cells are modeled and analyzed as competitive mechanisms determining their operation frequency. They are demonstrated to be mediated by the filament growth dynamics. Atomic migration is shown to be responsible for a slow change of the filament resistivity with typical switching times in the millisecond range. Fast switching with the shortest nanosecond delay can be achieved using bi stable electronic centers in the filaments. Possible configurations of such centers are discussed.

Pages: 3 to 4

Copyright: Copyright (c) IARIA, 2015

Publication date: August 23, 2015

Published in: conference

ISSN: 2308-3530

ISBN: 978-1-61208-431-2

Location: Venice, Italy

Dates: from August 23, 2015 to August 28, 2015