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Two-stage Wideband Class-E Power Amplifier in a 130 nm CMOS Process

Authors:
Danish Kalim
Adel Fatemi
Renato Negra

Keywords: Wideband, class-E, load transformation network (LTN), switching-mode power amplifier (SMPA), power added efficiency (PAE)

Abstract:
A wideband switching-mode power amplifier SMPA) provides an optimum solution to cover multiple wireless standards with high efficiency and a high level of integration in a low-cost CMOS process. In this paper, a single-ended two-stage PA operating at 2.5 GHz in 130 nm CMOS technology is presented. The main-stage comprises a class-E PA based on finite DC-feed inductance, which provides high output resistance and can, therefore, cover a wide frequency range. A class-E driver with interstage matching is used to drive the main-stage PA in order to obtain large overall power gain with an optimum PA performance. The main and the driver stages are operated at 3.3 V and 1.3 V, respectively. Simulations indicate that the PA provides peak output power of 23.0 dBm and peak power added efficiency (PAE) of 64.0 %. From 2.15 GHz to 3.1GHz, an output power of more than 20.5 dBm with a gain of 16.5 dB and PAE of more than 50.0 % are simulated.

Pages: 31 to 35

Copyright: Copyright (c) IARIA, 2012

Publication date: June 24, 2012

Published in: conference

ISSN: 2308-4219

ISBN: 978-1-61208-203-5

Location: Venice, Italy

Dates: from June 24, 2012 to June 29, 2012