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Silver Gate Field Effect Transistor for Oxygen Gas Sensor

Authors:
Keiji Tsukada
Daisuke Kiriake
Kenji Sakai
Toshihiko Kiwa

Keywords: FET, oxygen gas, silver gate

Abstract:
A silver gate field effect transistor (FET) integrated thermal controller was developed for a new type of oxygen gas sensor. It showed a threshold voltage change at a temperature as low as 80˚C. Oxygen response characteristics of the FET prepared with different productions of silver materials using a vacuum-evaporated membrane, printed material using silver-nanoparticles and silver epoxy were compared. The FET with a gate of silver epoxy showed the largest sensitivity of 135 mV/decade in the oxygen concentration range from 5% to 40% at 120˚C.

Pages: 5 to 7

Copyright: Copyright (c) IARIA, 2011

Publication date: August 21, 2011

Published in: conference

ISSN: 2308-3514

ISBN: 978-1-61208-145-8

Location: Nice/Saint Laurent du Var, France

Dates: from August 21, 2011 to August 27, 2011