Home // SENSORDEVICES 2011, The Second International Conference on Sensor Device Technologies and Applications // View article

Statistical Analysis of Dark Current in Silicon Photomultipliers

Authors:
Giuseppina Valvo
Alfio Russo
Delfo Sanfilippo
Giovanni Condorelli
Clarice Di Martino
Beatrice Carbone
Piergiorgio Fallica
Roberto Pagano
Sebania Libertino
Salvatore Lombardo

Keywords: silicon photomultipliers; dark current; wafer level

Abstract:
The aim of this paper is to investigate on a statistical basis at the wafer level the relationship existing among the dark currents of the single pixel compared to the whole Silicon Photomultiplier array. This is the first time to our knowledge that such a comparison is made, crucial to pass this new technology to the semiconductor manufacturing standards. In particular, emission microscopy measurements and current measurements allowed us to conclude that optical trenches strongly improve the device performances.

Pages: 109 to 112

Copyright: Copyright (c) IARIA, 2011

Publication date: August 21, 2011

Published in: conference

ISSN: 2308-3514

ISBN: 978-1-61208-145-8

Location: Nice/Saint Laurent du Var, France

Dates: from August 21, 2011 to August 27, 2011