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Impedance Measurements of Ethanol Sensing with Vanadium oxide / Porous Si / Si Structure

Authors:
Katia Chebout
Aicha Iratni Aicha Iratni
Ahmed Bouremana
Kawthar M’hammedi
Hamid Menari
Aissa Keffous
Noureddine Gabouze

Keywords: vanadium oxide; porous silicon; gas sensor.

Abstract:
The paper deals with a gas sensing device based on Vanadium oxide (V2O5)/ Porous Si (PS) /Si structure used to detect Ethanol gas at different concentration. The V2O5 thin films were deposited on porous silicon by the sol-gel (Dip-coating) technique. The Vanadium oxide has been produced from vanadium alcoxide precursor. Current-voltage and admittance characterizations show that the sensor characteristics are modified in the presence of gases. Conductance measurements at low frequencies indicate the presence of interface states.

Pages: 42 to 45

Copyright: Copyright (c) IARIA, 2012

Publication date: August 19, 2012

Published in: conference

ISSN: 2308-3514

ISBN: 978-1-61208-208-0

Location: Rome, Italy

Dates: from August 19, 2012 to August 24, 2012