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Ultraviolet Photodetectors Fabricated on 4H-SiC

Authors:
Andrzej Kociubinski
Mariusz Duk
Krzysztof Muzyka
Michal Borecki

Keywords: ultraviolet photodetector; semiconductor; thin film; ultraviolet light

Abstract:
The aim of the present work is an application of the fabrication technologies of p-n junctions working as photodetectors into the ultraviolet region. Usually, the ultraviolet (UV) photodetectors are fabricated as a standard p-n diode structure with the anode on the top and the cathode on the bottom on silicon carbide (4H-SiC) substrates. The critical part for detectors is the formation of the p-n junction. It can be done by different technological processes, such as ion implantation, epitaxy, etc. This paper presents three different technological approaches to fabricate UV photodetectors as p-n photodiode.

Pages: 78 to 80

Copyright: Copyright (c) IARIA, 2017

Publication date: September 10, 2017

Published in: conference

ISSN: 2308-3514

ISBN: 978-1-61208-581-4

Location: Rome, Italy

Dates: from September 10, 2017 to September 14, 2017