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Use of Body-Diode for Thermal Monitoring of Power MOSFET

Authors:
Giovanni Pangallo
Riccardo Carotenuto
Demetrio Iero
Massimo Merenda
Giovanna Adinolfi
Giorgio Graditi
Francesco Giuseppe Della Corte

Keywords: Junction temperature; Power MOSFET; Temperature measurement; Temperature sensors; Linear sensors.

Abstract:
The dependence on temperature of the body-drain voltage appearing across a forward-biased body-diode is used to estimate the junction temperature of power Metal-Oxide-Semiconductor Field-Effect Transistors. Moreover, the temperature sensor sensitivity, linearity, resolution, error and output repeatability are accurately discussed. The integrated diodes are characterized in a typical working temperature range, between about 22 °C and 150 °C and for currents between 1 µA and 1 mA. The best trade-off between sensitivity and linearity is found at a low bias current of 21 μA.

Pages: 132 to 135

Copyright: Copyright (c) IARIA, 2018

Publication date: September 16, 2018

Published in: conference

ISSN: 2308-3514

ISBN: 978-1-61208-660-6

Location: Venice, Italy

Dates: from September 16, 2018 to September 20, 2018