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2D In-plane Sensitive Hall Device

Authors:
Siya Lozanova
Avgust Ivanov
Chavdar Roumenin

Keywords: multidimensional magnetometry; 2D in-plane sensitive Hall device; Lorentz force action; three-contact Hall element; functional integration

Abstract:
A new single-chip silicon 2D in-plane sensitive Hall-effect device having the form of a Greek-cross surrounded by a deep p-zone is proposed. In each of the four ends of the n-Si cross, one ohmic contact is available. Through the original design and circuitry, two independent currents with non-standard topology sharing the same active region are formed. The contacts are connected to one load resistor each, whereas the resistors with the opposite contacts are fed into one supply terminal, and the resistors with the other two contacts are connected to the other supply terminal. The pairs of opposite contacts are the outputs for the two orthogonal in-plane magnetic-field components at sensitivities SRI ≈ 110 V/AT. The channel offsets are fully compensated by trimming and the contact numbers are only 4. The non-linearity is small and does not exceed 0.5 % within the range + 0.6 T ÷ - 0.6 T. The cross-talk is very promising and is no more than 2.3% at induction B = 1.0 T, the spatial resolution is high compared to the standard solutions, reaching 70 x 30 x 40 μm3, and the lowest detected magnetic induction with signal – to – noise ratio equal to 1 at supply current of 3 mA is Bmin ≈ 11µT.

Pages: 72 to 75

Copyright: Copyright (c) IARIA, 2019

Publication date: October 27, 2019

Published in: conference

ISSN: 2308-3514

ISBN: 978-1-61208-745-0

Location: Nice, France

Dates: from October 27, 2019 to October 31, 2019