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Simulation Model of the Integrated Hall Element Implemented in Verilog-A

Authors:
Damjan Berčan
Janez Trontelj

Keywords: Hall element; simulation model; Verilog-A

Abstract:
The paper describes the development of the improved simulation model based on a six terminal Hall element implemented in the hardware description language Verilog-A. The new simulation model considers temperature effects, offset voltage, influence of mechanical stress, external magnetic field and internal magnetic field generated by the internal microcoil. To obtain the best accuracy of the Verilog-A based model, all key parameters of the simulation model were determined and characterized by measuring the manufactured Hall plate bonded into a ceramic package. The verification of the improved simulation model was performed in the Cadence Spectre simulator. The Hall element simulation model was designed in the 0.18µm technology but can be easily adapted to any technology to a certain extent by adjusting its parameters according to the measurement results.

Pages: 69 to 74

Copyright: Copyright (c) IARIA, 2020

Publication date: November 21, 2020

Published in: conference

ISSN: 2308-3514

ISBN: 978-1-61208-820-4

Location: Valencia, Spain

Dates: from November 21, 2020 to November 25, 2020