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Simulation of Device Behavior for InAlAs/InGaAs HEMT under Optical Illumination.

Authors:
Pritam Sharma
Radhey Shyam Gupta
Jyotika Jogi

Keywords: Heterostructure; HEMT; Optical-illumination; Photo-generation; Simulation.

Abstract:
This paper presents simulation of optical effects on the DC parameters of 100 nm single gate InAlAs/InGaAs High Electron Mobility Transistor (HEMT). The advantage of this model is that it provides us the flexibility to study the effects of optical illumination on the device parameters by specifying a user defined photo-generation rate as a constant or as a function of position in the device. The current–voltage characteristics of the device under dark and illuminated conditions have been simulated using luminous module (Silvaco Device Simulator) and recalling C-Interpreter function F.RADIATE to specify a constant photo generation rate. Significant increase in the drain to source current has been observed, suggesting future possible applications as optoelectronic device.

Pages: 52 to 55

Copyright: Copyright (c) IARIA, 2016

Publication date: August 21, 2016

Published in: conference

ISSN: 2308-4537

ISBN: 978-1-61208-501-2

Location: Rome, Italy

Dates: from August 21, 2016 to August 25, 2016