Home // International Journal On Advances in Systems and Measurements, volume 13, numbers 1 and 2, 2020 // View article
Authors:
Pape Sanoussy Diao
Thierry Alves
Benoit Poussot
Martine Villegas
Keywords: LNA design and characterization; 60 GHz; GaAs m-HEMT; Radar detection systems; Millimeter-wave technology.
Abstract:
This paper addresses the design of a 60 GHz lownoise amplifier for radar detection systems. Based on an impulse architecture, the required characteristics of the amplifier are determined to improve the system performance, especially in terms of range. The choice of the design technology is based on a detailed comparative study. Then, the amplifier is designed in a 70 nm gallium-arsenide metamorphic high electron mobility transistor technology. It includes three-stages transistors with inductive degeneration for a suitable trade-off between gain and noise. Critical design points related to coupling phenomena are identified in the layout realization. To limit these coupling effects, a progressive optimization method is used. The optimized amplifier achieves a gain of 14.3 dB and a noise factor of 2.1 dB at 60 GHz. The simulated non-linear characteristics show an input 1 dB compression point IP1dB = −9.6 dBm and an input third-order intercept point IIP 3 ≈ −4 dBm. A good impedance matching at the input (S11 < −15.4 dB) and the output (S22 < −16.3 dB) is obtained in the frequency band of interest. The designed circuit consumes a total direct current power of 13.5 mW and occupies an area of 1.47 × 1.0 mm2. In addition, the sensitivity characterization of the amplifier to voltage biasing, temperature and input impedance variations shows a good robustness of the design.
Pages: 150 to 160
Copyright: Copyright (c) to authors, 2020. Used with permission.
Publication date: June 30, 2020
Published in: journal
ISSN: 1942-261x