Home // International Journal On Advances in Systems and Measurements, volume 5, numbers 1 and 2, 2012 // View article

Electro-Magnetic Modeling and Design of Through Silicon Vias Based Passive Interposers for High Performance Applications up to the V-Band

Authors:
Olivier Tesson
Magali Duplessis
Stephane Charlot

Keywords: Finite Element Method; Through Silicon Via; Filtering; EM simulations; passive interposer; Millimeter-wave

Abstract:
The present paper reports the design and Electro-Magnetic (EM) modeling of Through Silicon Via (TSV) based band-pass filters embedded in passive interposers for C and V-band applications. For each filter, EM simulations have been performed with the help of a FEM (Finite Element Method) 3D EM solver. Prior to filter implementation, a comparison between simulated and measured data is proposed on dedicated structures (3D solenoids, and transmission lines) to calibrate the simulator and validate the simulation methodology. The obtained simulation results are successfully correlated to measurement data up to 110 GHz. In addition, an original package characterization up to 30 GHz is also proposed to support filter design and implementation. The proposed filter architectures permit a clear reduction of the filter footprint (up to 90 % vs. conventional implementation on ceramic substrate) with good electrical performances. Depending on the application IL of 2,6 and 2,0 dB have been simulated respectively at 4 and 42 GHz. Discussion on advantages of using either high/low aspect ratio TSV together with different Back-End Of Line (BEOL) option is proposed based on these two typical examples. Perspectives are then given in terms of 3D-IC integration.

Pages: 55 to 69

Copyright: Copyright (c) to authors, 2012. Used with permission.

Publication date: June 30, 2012

Published in: journal

ISSN: 1942-261x