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Performance Characterization of TAS-MRAM Architectures in Presence of Capacitive Defects

Authors:
João Azevedo
Arnaud Virazel
Yuanqing Cheng
Alberto Bosio
Luigi Dilillo
Patrick Girard
Aida Todri
Jeremy Alvarez Herault

Keywords: non-volatile memories; spintronics; TAS-MRAM; capacitive defects; fault modeling; test.

Abstract:
Magnetic Random Access Memory (MRAM) is an emerging memory technology. Among existing MRAM technologies, Thermally Assisted Switching (TAS) MRAM technology offers several advantages such as selectivity, single magnetic field and high integration density. In this paper, we analyze the impact of capacitive defects on the TAS-MRAM performance. Electrical simulations were performed on a 16-words TAS-MRAM architecture enabling any sequences of read/write operations. Results show that writing operations may be affected by these defects. Especially, we demonstrate that some capacitive defects may have a local (single cell) impact on the functionality of TAS-MRAM while others, even if there is an effective coupling, do not change the functional operation. These results will be further used to develop effective test algorithms targeting faults related to actual defects that may affect TAS-MRAM architecture.

Pages: 39 to 44

Copyright: Copyright (c) IARIA, 2013

Publication date: October 27, 2013

Published in: conference

ISSN: 2308-4316

ISBN: 978-1-61208-307-0

Location: Venice, Italy

Dates: from October 27, 2013 to October 31, 2013