12. J. Sánchez-Dehesa,
F. Guinea, and F.
Flores. SCHOTTKY BARRIER FORMATION II: ETCHED METAL-SEMICONDUCTOR JUNCTIONS.
Journal of Physics C, 17, pp. 2039-2047 (1984).
11. J. Sánchez-Dehesa
& F. Flores. SCHOTTKY BARRIER FORMATION FOR ABRUPT METAL-COVALENT
SEMICONDUCTOR JUNCTIONS. Solid State Communications, Vol. 50 (1), pp. 29-31
(1984).
10. F. Flores, J. Sánchez-Dehesa,
and F. Guinea. METAL-SEMICONDUCTOR
JUNCTIONS. Journal of Physique, 45, pp. 401-407 (1984).
9. F. Guinea, J. Sánchez-Dehesa,
and F. Flores.
SCHOTTKY BARRIER FORMATION. ABRUPT METAL-SEMICONDUCTOR JUNCTIONS. Revista Brasileira de
Fisica, Vol. Febr.
83, pp. 347-352
(1983).
8. F. Guinea, J. Sánchez-Dehesa, and F. Flores. SCHOTTKY BARRIER FORMATION I: ABRUPT METAL-SEMICONDUCTOR JUNCTIONS. Journal of Physics C, Vol. 16, pp. 6499-6512, 1983.
7. A. J. Hernandez-Cabrera, J. Sánchez-Dehesa & C. Tejedor. THEORETICAL ANALYSIS OF OPTICAL PHONON DEFORMATION POTENTIAL IN SEMICONDUCTORS. Journal of Physics C, Vol. 16, pp. 2251-2259 (1983).
6. J. Sánchez-Dehesa, C. Tejedor, and J. A. Vergés. SELF-CONSISTENT CALCULATION OF THE INTERNAL STRESS PARAMETER OF SILICON. : Phys. Rev. B26 (10), pp. 5960-5962 (1982).
5. J. Sánchez-Dehesa and C. Tejedor. SELFCONSISTENT CALCULATION OF PROPERTIES OF GaAs-AlAs SUPERLATTICES WITH HOMOPOLAR INTERFACES. Phys. Rev. B26, pp. 5824-5831 (1982).
4. J. Sánchez-Dehesa, F. Guinea, and C. Tejedor. ELECTRON-PHONON INTERACTION IN TETRAEDRALY BONDED SOLIDS. Journal of Physics C,14, pp. 3355-3363, 1981.
3. J. Sánchez-Dehesa, J.A. Vergés and C. Tejedor. GENERALIZED WANNIER FUNCTIONS AT INTERFACES: STACKING FAULTS AT SILICON. Physical. Review. B24, pp. 1006-1013 (1981).
2. J. Sánchez-Dehesa, J.A. Vergés, and C. Tejedor. DIAMOND STRUCTURE VERSUS WURZITE STRUCTURE FOR SILICON. Solid State Communications, 38, pp. 871-873, 1981.
1. J. Sánchez-Dehesa and F. Flores. PLASMON MODES AT A CORNER USING NON-LOCAL DIELECTRIC FUNCTION, Solid State Communications, 35, pp. 815-818 (1980).