1990-1985

25. C. López, F. Meseguer, J. Sánchez-Dehesa, W.W. Rhüle, and K. Ploog. TUNNELING TIME OF ELECTRONS IN MODULATION n-DOPED GaAlAs-GaAs- GaAlAs QUANTUM WELLS. Superlattices and Microstructures, Vol. 10, pp. 221-224, 1990.  

24. C. López, F. Meseguer, J. Sánchez-Dehesa, and K. Ploog. MAGNETOLUMINESCENCE STUDIES OF MODULATION n-DOPED GaAs-AlGaAs MULTIPLE QUANTUM WELLS. Surface Science, 228, pp. 202-205 (1990).  

23. G. Platero, J. Sánchez-Dehesa, C. Tejedor, and F. Flores.  ELECTRONIC STRUCTURES OF (100) SEMICONDUCTOR HETEROJUNCTIONS. Surface Science. 168, pp. 553-557, 1986.

22. G. Platero, J. Sánchez-Dehesa, C. Tejedor, F. Flores, and A. Muñoz. ANION-INDUCED SURFACE STATES FOR THE IDEAL (100) FACES OF GaAs, AlAs and GaSb. Surface Science, 172, pp. 47-56, 1986. 

 21. F. Borondo and J. Sánchez-Dehesa. ELECTRONIC STRUCTURE OF A GaAs QUANTUM WELL IN AN ELECTRIC FIELD. Physical Review B33 (12), pp. 8758-8761 (1986).

20. A. Muñoz, J. Sánchez-Dehesa and F. Flores. EARLY STAGES OF GaAs-Ge (110) INTERFACE FORMATION.  Europhysics Letters, 2, pp. 385-391, 1986.

19. A. Muñoz, J. Sánchez-Dehesa, and F. Flores. HETEROJUNCTION VALENCE BAND DISCONTINUITY DEPENDENCE ON FACE ORIENTATION. Phys. Rev. B (RC), 35, pp. 6468-6470, 1987.     

18. J. Sánchez-Dehesa, F. Meseguer, F. Borondo & J. C. Maan.  SELF-CONSISTENT CALCULATION OF THE ELECTRONIC PROPERTIES OF AN GaAlAs SELECTIVELY DOPED QUANTUM WELL UNDER HIGH MAGNETIC FIELD. Physical Review B (Rapid Communications), 36 (9), pp. 5070-5073 (1987).

17. A. Muñoz, J. Sánchez-Dehesa and F. Flores. REPLY TO THE COMMENT ON HETEROJUNCTION VALENCE BAND DISCONTINUITY DEPENDENCE ON FACE ORIENTATION.   Phys. Rev. B, Vol. 37 (9), pp.  4803-4804, 1988.

16. J. Ortega, J. Sánchez-Dehesa & F. Flores. EARLY STAGE FORMATION OF METAL-SEMICONDUCTOR INTERFACES. Phys. Rev.B (RC), 37 (14), pp. 8516-8518 (1988).

15. J. Sánchez-Dehesa, J. Ortega, F. Flores & J. D. Dow. SCHOTTKY BARRIER FORMATION IN DEFECT FREE METAL III-V SEMICONDUCTOR JUNCTIONS. Surface Science, 200, pp. 424-434, 1988.  

14. C. López, J. Sánchez-Dehesa, F. Meseguer, F. Borondo and K. Ploog. ELECTRONIC STRUCTURE OF MODULATION n-DOPED MULTIPLE QUANTUM WELLS. Applied Surface Science, Vol. 41/42, pp. 464-469 (1989).  

13. S. Lee, J. Sánchez-Dehesa, and J. Dow. THEORETICAL INVESTIGATIONS OF THE PRESSURE DEPENDENCE OF ENERGY GAPS IN SEMICONDUCTORS. Phys. Rev. B32, pp. 1152-1155, 1985.