1996-1991

40. J. A. Porto, G. Yang, S-Y. Wu, and J. Sánchez-Dehesa. STRUCTURAL PROPERTIES OF GaP CLUSTERS ENCAPSULATED IN ZEOLITE Y. Solid State Electronics, Vol. 40, 771-775, (1996).

39. C. López, F. Meseguer, and J. Sánchez-Dehesa. ELECTRONIC LOCALIZATION AND STRESS INHOMOGENEITY: FROM QUANTUM WELLS TO COUPLED QUANTUM WIRES AND DOTS. Mat. Sci. Technol., 11, pp. 835-839 (1995).

38. J. Sánchez-Dehesa, J.A. Porto, F. Agulló-Rueda & F. Meseguer. ELECTRONIC ENERGY LEVELS OF QUANTUM WELL WIRES. J. of Appl. Phys., 73, pp. 5027-5031, (1993).

37. J. A. Porto and J. Sánchez-Dehesa. THEORETICAL STUDY OF STRAINED THIN QUANTUM WELLS GROWN ON VICINAL SURFACES. Phys. Rev. B51 (20), pp. 14352-14400 (1995).

36. F. Plentz, E.A. Meneses, F. Meseguer, and J. Sánchez-Dehesa. NEW AlxGa1-xAs RELATED DEEP LUMINESCENCE OBSERVED IN MODULATION DOPED QUANTUM WELLS. J. of Appl. Phys., 77 (11), pp. 5946-5949 (1995).

35. C. López, F. Mayoral, F. Meseguer, J.A. Porto, J. Sánchez-Dehesa, N. Grandjean, C. Deparis & J. Massies. TERRACE LENGH CONMENSURABILITY AND SURFACE RECONSTRUCTION IN HIGHLY STRAINED Ingaes/GaAs QUANTUM WELLS GROWN ON VICINAL SURFACES. Superlattices and Microstructures, Vol. 15, pp. 155-159 (1994).

34. N. Mingo, J. A. Porto, and J. Sánchez-Dehesa. DOPING PROFILES EFECTS ON THE TUNNELING TIMES OF ELECTRONS CONFINED IN DOUBLE-BARRIER HETEROSTRUCTURES. Phys. Rev. B50, pp. 11884-11895, (1994).

33. J.M. Gilperez, J.L. Sánchez-Rojas, E. Muñoz, E. Calleja, J.P.R.David, M. Reddy, G. Hill & J. Sánchez-Dehesa. ROOM AND LOW TEMPERATURE ASSESSMENT OF PSEUDOMORPHIC AlGaAs/InGaAs/GaAs HIGH ELECTRON MOBILITY TRANSISTORS BY PHOTOLUMINESCENCE SPECTROSCOPY. J. of Appl. Phys., 76 (10), pp. 5931-5944, (1994).

32. J. Martinez- Pastor, F. Agulló-Rueda, F. Meseguer, J. Sánchez-Dehesa, A. Marti-Ceschin & J. Massies. LOCALIZATION IN HIGHLY STRAINED In_0.35Ga_0.65As/GaAs ULTRATHIN QUANTUM WELLS. Superlattices and Microstructures, Vol. 14 (1), pp. 39-47 (1994).

 31. J. A. Porto and J. Sánchez-Dehesa. L. Cury, A. Nogaret, and J.C. Portal. LEFT AND RIGHT TUNNELING TIMES OF DOUBLE BARRIERS SEMICONDUCTOR STRUCTURES. Journal of Physics: Condensed Matter, 6, pp. 887-898 (1994).

30. F.Plentz, F. Meseguer, J. Sánchez-Dehesa, N. Mestres & E.A. Meneses. OPTICAL CONTROL OF THE 2DEG DENSITY IN MODULATION DOPED QUANTUM WELLS STUDIED BY MAGNETOLUMINESCENCE. Phys. Rev. B 48 (3), pp. 1967-1969 (1993).

29. F. Meseguer, N. Mestres, J. Sánchez-Dehesa, C. Deparis, G. Neu and J. Massies. MAGNETOOPTICS OF NARROW GaAs/AlGaAs QUAQNTUM WELLS GROWN ON VICINAL SURFACES. Phys. Rev. B45, pp. 6942-6945 (1993).

28. F. Meseguer, F. Agulló-Rueda, C. López, J. Sánchez-Dehesa, J. Massies and A. Marti Ceschin. LATERAL SUPERLATTICE EFFECTS IN VERY NARROW STRAINED SEMICONDUCTOR QUANTUM WELLS GROWN ON VICINAL SURFACES. Phys. Rev. B47 (20), pp. 13880-13883 (1993).

27. J. Sanchez-Dehesa, D. Lavielle, E. Ranz, B. Goutiers, J.C. Portal, E. Barbier, A.Y. Cho, and D.L. Sivco. PRESSURE EXPERIMENTS AND SELF-CONSISTENT MODELIZATION OF THE TRANSPORT PROPERTIES IN d-DOPED AlGaAs LAYERS. Semiconductor Science and Technology, 6, pp. 445-448 (1992).

26. J. Sánchez-Dehesa, J.L. Sánchez-Rojas, C. López & R.H. Nicholas. ENHANCED CARRIER DENSITIES AND DEVICE PERFORMANCE IN PIEZOELECTRIC PSEUDOMORFIC HEMT STRUCTURES. Appl. Phys. Lett., 61, pp. 1072-1075 (1991).